2010. 8. 25 1/6 semiconductor technical data KF5N50FZA/fsa n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features h v dss = 500v, i d = 5.0a h drain-source on resistance : r ds(on) =1.4 ? @v gs = 10v h qg(typ) = 12nc h t rr(typ) = 150ns (kf5n50fsa) h t rr(typ) = 300ns (KF5N50FZA) maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 500 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 5.0* a @t c =100 ? 2.9* pulsed (note1) i dp 13* single pulsed avalanche energy (note 2) e as 270 mj repetitive avalanche energy (note 1) e ar 8.6 mj peak diode recovery dv/dt (note 3) dv/dt 20 v/ns drain power dissipation tc=25 ? p d 37.9 w derate above 25 ? 0.30 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 3.3 ? /w thermal resistance, junction-to- ambient r thja 62.5 ? /w pin connection downloaded from: http:///
2010. 8. 25 2/6 KF5N50FZA/fsa revision no : 0 electrical characteristics (tc=25 ? ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l=19.5mh, i s =5a, v dd =50v, r g =25 ? , starting t j =25 ? . note 3) i s ? 5a, di/dt ? 100a/ k , v dd ? bv dss , starting t j =25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. marking characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.55 - v/ ? drain cut-off current i dss v ds =500v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.5 - 4.5 v gate leakage current i gss v gs = ? 25v, v ds =0v - - ? 10 u drain-source on resistance r ds(on) v gs =10v, i d =2.5a - 1.15 1.4 ? dynamic total gate charge q g v ds =400v, i d =5a v gs =10v (note4,5) - 12 - nc gate-source charge q gs - 2.4 - gate-drain charge q gd - 5.4 - turn-on delay time t d(on) v dd =250v r l =50 ? r g =25 ? (note4,5) - 22.5 - ns turn-on rise time t r - 29 - turn-off delay time t d(off) - 58 - turn-off fall time t f - 18 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 430 - pf output capacitance c oss - 71 - reverse transfer capacitance c rss - 7.5 - source-drain diode ratings continuous source current i s v gs KF5N50FZA t rr i s =5a, v gs =0v, dis/dt=100a/ k - 300 - ns kf5n50fsa - 150 - reverse recovery charge KF5N50FZA q rr - 4.8 - c kf5n50fsa - 0.42 - downloaded from: http:///
2010. 8. 25 3/6 KF5N50FZA/fsa revision no : 0 downloaded from: http:///
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